| PART |
Description |
Maker |
| BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
| BBY55-03W BBY5503W Q62702-B0911 |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
Siemens Group
|
| BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管（高Q hyperabrupt调谐二极管低串联电感
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| KDV149 KDV149B KDV149C KDV149D |
Silicon diode for AM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(AM RADIO BAND TUNING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| BBY52-02W Q62702-B0860 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 3.10 inch width x 1.87 inch depth, Textured Black Finish
Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
| MMVL409T1G |
Silicon Tuning Diode VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ON Semiconductor
|
| KDV262 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV214E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
